ksd-d6o013-001 1 SDB10150DI schottky barrier rectifier to-252 dual common cathode schottky rectifier features ? low forward voltage drop and leakage current ? low power loss and high efficiency ? high surge capability ? dual common cathode rectifier ? halogen-free component and rohs compliant device applications ? power supply - output rectification ? converter ? free-wheeling diode ? reverse battery protection ? power inverters description the SDB10150DI has two schottky barriers arranged in a common cathode configuration. typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. ordering information device marking code package packaging SDB10150DI SDB10150DI to-252 tape & reel marking information SDB10150DI yww SDB10150DI yww product characteristics i f(av) 2 x 5a v rrm 150v v fm at 125 0.75v i fsm 120a SDB10150DI = specific device code yww = year & week code marking -. y = year code -. ww = week code to-252 pin configuration pin 1, 3: anode pin 2, 4: cathode
ksd-d6o013-001 2 absolute maximum ratings (limiting values) characteristic symbol value unit maximum repetitive reverse voltage maximum working peak reverse voltage maximum dc blocking voltage v rrm v rwm v r 150 v maximum average forward rectified current per diode i f(av) 5 a total device 10 peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode i fsm 120 a storage temperature range t stg -45 to +150 maximum operating junction temperature t j 150 thermal characteristics characteristic symbol value unit maximum thermal resistance junction to case per diode r th(j-c) 4.0 /w total device 3.6 electrical characteristics (per diode) characteristic symbol test condition min. typ. max. unit peak forward voltage drop v fm (1) i fm = 5a t j =25 - - 0.88 v t j =125 - - 0.75 v reverse leakage current i rm (1) v r = v rrm t j =25 - - 10 ua t j =125 - - 10 ma junction capacitance c j v r = 4v dc , f=1mhz - 80 - pf note : (1) pulse test : t p 380 ? , duty cycle 2% to evaluate the conduction losses us e the following equation (fig 4.) : p f = 0.72 x i f(av) + 0.021 i f 2 (rms) SDB10150DI i fm 2 i f(av) i f(av) v fm forward voltage : v fm = v to + rd i fm conduction loss : p f = v to i f(av) + rd i f 2 (rms) rd v to
ksd-d6o013-001 3 rating and characteristic curves SDB10150DI fig. 1) typical forward characteristics (per diode) fig. 2) typical reverse characteristics (per diode) fig. 3) maximum forward derative curve fig. 6) typical junction capacitance (per diode) fig. 4) forward power dissipation (per diode) fig. 5) maximum non-repetitive peak forward surge current (per diode)
ksd-d6o013-001 4 recommended land pattern [unit: mm] package outlin e dimension SDB10150DI 4.60 1.50 2 . 5 0 7 . 0 0 7.00
ksd-d6o013-001 5 the auk corp. products are intended for the use as components in general electronic equipment (office and co mmunication equipment, m easuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equipm ents without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice. SDB10150DI
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